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?2011
Fairchild Semiconductor Corporation
RHRD660S9A_F085 Rev. C2
Electrical Speci?cations
TC
= 25
oC, Unless Otherwise Speci?ed
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF
= 6A
-
-
2.1
V
IF
= 6A, T
C
= 150
oC
-
-
1.7
V
IR
VR
= 600V
-
-
100
μA
VR
= 600V, T
C
= 150
oC
-
-
500
μA
trr
IF
= 1A, dI
F/dt = 200A/μs- -
30 ns
IF
= 6A, dI
F/dt = 200A/μs- -
35 ns
ta
IF
= 6A, dI
F/dt = 200A/μs
-
16
-
ns
tb
IF
= 6A, dI
F/dt = 200A/μs
-
8.5
-
ns
QRR
IF
= 6A, dI
F/dt = 200A/μs
-
45
-
nC
CJ
VR
= 10V, I
F
= 0A
-
20
-
pF
RθJC
--3oC/W
DEFINITIONS
VF
= Instantaneous forw
ard voltage (pw = 300μs, D = 2%).
IR
= Instantaneous rev
erse current.
trr
= Rev
erse recovery time (See Figure 9), summation of ta
+ t
b.
ta
= Time to reach peak re
verse current (See Figure 9).
tb
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
QRR
= Rev
erse recovery charge.
CJ
= Junction capacitance
.
RθJC
= Ther
mal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE
VF, FORWARD VOLTAGE (V)
1
30
0.5
0 0.5
10
121.5
2.5
3
I
F
, FOR
WARD CURRENT (A)
25oC
175oC
100oC
0.010
600
400
300
200
100
0.1
1
10
1000
100
500
100oC
175oC
25oC
VR, REVERSE VOLTAGE (V)
I
R
,
REVERSE CURRENT (
μ
A)
RHRD660S9A_F085
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